A Physical Mosfet Model Applicable To Extremely Scaled Cmos Ic Design

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A Physical Mosfet Model Applicable To Extremely Scaled Cmos Ic Design

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A Physical Mosfet Model Applicable To Extremely Scaled Cmos Ic Design

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A Physical Mosfet Model Applicable To Extremely Scaled Cmos Ic Design

Abstract:a Process-based Model (ufet) For Deep-submicron Bulk-silicon Mosfets Is Developed And Verified With Numerical Device Simulations And Measured Data. The Charge-based Model Is Physical With Accountings For The Predominant Short-channel (e.g., Charge Sharing, Drain-induced Threshold Reduction And Velocity Saturation) And Extremely Scaled-technology (i.e., Energy Quantization And Polysilicon-gate Depletion) Effects In Mosfets. The Key To Ufet Is The Characterization Of The Bias-dependent Two-dimensional Regions Near The Source Drain Junctions Which Can Extend Over A Significant Fraction Of The Metallurgical Channel Length.
  • Fruugo ID: 556917723-1125151397
  • ISBN: 9780530007960
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